• DocumentCode
    1504200
  • Title

    Quasi-three-dimensional simulation of carrier dynamics in quantum well DFB lasers

  • Author

    Witzigman, B. ; Oyafuso, F. ; Hess, K.

  • Author_Institution
    Integrated Syst. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland
  • Volume
    145
  • Issue
    6
  • fYear
    1998
  • fDate
    12/1/1998 12:00:00 AM
  • Firstpage
    339
  • Lastpage
    343
  • Abstract
    A quasi-3D simulation for quantum well (QW) distributed feedback (DFB) laser diodes is presented. It takes into account both longitudinal effects such as the nonuniformity of the optical intensity, local gain, and spontaneous emission, and lateral effects such as current spreading, quantum carrier capture, and quantum carrier heating. The simulation is performed by solving several 2D cross-sections using Minilase II and a 1D longitudinal solver in a self-consistent fashion. As an example, an analysis of spatial hole burning in a λ/4 phase shifted DFB laser is given. It is shown that spatial hole burning (SHE) results in a local gain saturation, and is mainly restricted to electrons and holes within the QW. Investigations of electron heating at high power show that the temperature distribution of the bound electrons and the LO phonons in the QW is insignificant, and only slightly influenced by SHE
  • Keywords
    distributed feedback lasers; hot carriers; laser theory; optical hole burning; quantum well lasers; spontaneous emission; Minilase II; carrier dynamics; current spreading; electron heating; local gain saturation; optical intensity; quantum carrier capture; quantum well DFB laser diode; quasi-three-dimensional simulation; spatial hole burning; spontaneous emission;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2433
  • Type

    jour

  • DOI
    10.1049/ip-opt:19982475
  • Filename
    762370