DocumentCode
1504200
Title
Quasi-three-dimensional simulation of carrier dynamics in quantum well DFB lasers
Author
Witzigman, B. ; Oyafuso, F. ; Hess, K.
Author_Institution
Integrated Syst. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland
Volume
145
Issue
6
fYear
1998
fDate
12/1/1998 12:00:00 AM
Firstpage
339
Lastpage
343
Abstract
A quasi-3D simulation for quantum well (QW) distributed feedback (DFB) laser diodes is presented. It takes into account both longitudinal effects such as the nonuniformity of the optical intensity, local gain, and spontaneous emission, and lateral effects such as current spreading, quantum carrier capture, and quantum carrier heating. The simulation is performed by solving several 2D cross-sections using Minilase II and a 1D longitudinal solver in a self-consistent fashion. As an example, an analysis of spatial hole burning in a λ/4 phase shifted DFB laser is given. It is shown that spatial hole burning (SHE) results in a local gain saturation, and is mainly restricted to electrons and holes within the QW. Investigations of electron heating at high power show that the temperature distribution of the bound electrons and the LO phonons in the QW is insignificant, and only slightly influenced by SHE
Keywords
distributed feedback lasers; hot carriers; laser theory; optical hole burning; quantum well lasers; spontaneous emission; Minilase II; carrier dynamics; current spreading; electron heating; local gain saturation; optical intensity; quantum carrier capture; quantum well DFB laser diode; quasi-three-dimensional simulation; spatial hole burning; spontaneous emission;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings -
Publisher
iet
ISSN
1350-2433
Type
jour
DOI
10.1049/ip-opt:19982475
Filename
762370
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