• DocumentCode
    1504276
  • Title

    Three-dimensional characterisation of a two-dimensional photonic bandgap reflector at midinfrared wavelengths

  • Author

    Rowson, S. ; Chelnokov, A. ; Cuisin, C. ; Lourtioz, J.M.

  • Author_Institution
    Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France
  • Volume
    145
  • Issue
    6
  • fYear
    1998
  • fDate
    12/1/1998 12:00:00 AM
  • Firstpage
    403
  • Lastpage
    408
  • Abstract
    A combined experimental and theoretical study is presented of the reflection properties of a two-dimensional photonic crystal in a three-dimensional optical environment. The crystal is a triangular lattice of cylindrical holes in bulk silicon. The reflection spectra are measured over a wide range of midinfrared wavelengths by using a Fourier-transform spectrometer with a convergent incident beam. Very high reflection coefficients are demonstrated for the first-order forbidden bands, reaching 98%, for the first band (λ≈6-8 μm) in TE polarisation following Γ-M direction. This result is of great promise for future applications of photonic bandgap reflectors in the midinfrared. From the comparison between the results of characterisation and those of numerical simulations, the contributions of the different effects that degrade the reflector performances are separated. The incident-beam divergence is shown to modify the shapes, widths and positions of the higher-order forbidden bands. Diffraction losses at the interface are found to be strongly dependent on the crystal termination and orientation, and can reach 60%, but only for the smallest wavelengths investigated. In turn, the fabrication inhomogeneities such as the small roughness of the interface or the hole-radius dispersion are shown to be the prime cause of degradation as long as diffraction effects remain weak
  • Keywords
    Fourier transform spectra; crystal orientation; elemental semiconductors; infrared spectra; light polarisation; mirrors; optical losses; photonic band gap; reflectivity; silicon; surface topography; 6 to 8 mum; Fourier-transform spectra; Si; TE polarisation; bulk silicon; crystal orientation; crystal termination; diffraction losses; fabrication inhomogeneities; first-order forbidden bands; high reflection coefficients; higher-order forbidden bands; midinfrared wavelength; numerical simulations; photonic bandgap reflectors; reflection spectra; three-dimensional characterisation; triangular lattice; two-dimensional photonic bandgap reflector; two-dimensional photonic crystal;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2433
  • Type

    jour

  • DOI
    10.1049/ip-opt:19982470
  • Filename
    762381