DocumentCode :
1504282
Title :
Experimental investigation of layer-by-layer metallic photonic crystals
Author :
Temelkuran, B. ; Altug, H. ; Ozbay, E.
Author_Institution :
Dept. of Phys., Bilkent Univ., Ankara, Turkey
Volume :
145
Issue :
6
fYear :
1998
fDate :
12/1/1998 12:00:00 AM
Firstpage :
409
Lastpage :
414
Abstract :
The authors have investigated the transmission properties and defect characteristics of layer-by-layer metallic photonic crystals. They have demonstrated experimentally that the metallicity gap of these crystals extends to an upper band-edge frequency, and no lower edge was detected down to 2 GHz. The defect structures built around these crystals exhibited high transmission peak amplitudes (100%) and high 𝒬 factors (2250). The crystals with low filling ratios (around 1-2%) were tested and were still found to possess metallic photonic crystal properties. These crystals exhibited high reflection rates within the metallicity gap and reasonable defect mode characteristics. A power enhancement factor of 190 was measured for the electromagnetic (EM) wave within planar cavity structures, by placing a monopole antenna inside the defect volume. These measurements show that detectors embedded inside a metallic photonic crystal can be used as frequently selective resonant cavity enhanced (RCE) detectors with increased sensitivity and efficiency when compared to conventional detectors
Keywords :
Q-factor; cavity resonators; crystal defects; light transmission; metallic superlattices; optical multilayers; photodetectors; photonic band gap; 2 GHz; defect characteristics; defect mode characteristics; defect structures; efficiency; electromagnetic wave; frequently selective resonant cavity enhanced detectors; high Q factors; high reflection rates; high transmission peak amplitudes; layer-by-layer metallic photonic crystals; low filling ratios; metallicity gap; monopole antenna; planar cavity structures; power enhancement factor; sensitivity; transmission properties; upper band-edge frequency;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2433
Type :
jour
DOI :
10.1049/ip-opt:19982471
Filename :
762382
Link To Document :
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