DocumentCode :
1504384
Title :
Microwave modulation of a quantum-well laser with and without external optical injection
Author :
Jin, X. ; Chuang, S.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Volume :
13
Issue :
7
fYear :
2001
fDate :
7/1/2001 12:00:00 AM
Firstpage :
648
Lastpage :
650
Abstract :
We compare three microwave modulation methods experimentally and theoretically using a semiconductor quantum-well (QW) Fabry-Perot test laser: (1) direct microwave current modulation of the test laser (electrical modulation); (2) optical modulation by an external single-wavelength pump laser with a modulated optical injection power; and (3) electrical modulation of the test laser that is injection locked by an external single-wavelength pump laser with a constant injection power. This is the first direct comparison of the three modulation methods on the same QW laser, to the best of our knowledge. The bandwidth of optical absorption modulation is 7.7 GHz, which is 1.45 times the direct electrical modulation bandwidth (5.3 GHz) at a bias current of 30 mA in the test laser. On the other hand, the electrical modulation of the test laser under injection-locking condition has a significantly higher modulation bandwidth (10.5 GHz) than both the electrical and optical modulation methods.
Keywords :
Fabry-Perot resonators; electro-optical modulation; laser mode locking; optical modulation; optical pumping; quantum well lasers; 10.5 GHz; 30 mA; 5.3 GHz; 7.7 GHz; bandwidth; bias current; constant injection power; direct electrical modulation bandwidth; direct microwave current modulation; electrical modulation; external optical injection; external single-wavelength pump laser; injection-locking condition; microwave modulation; modulated optical injection power; optical absorption modulation; optical modulation; quantum-well laser; semiconductor QW Fabry-Perot test laser; Bandwidth; Laser theory; Masers; Microwave theory and techniques; Optical modulation; Power lasers; Pump lasers; Quantum well lasers; Semiconductor device testing; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.930402
Filename :
930402
Link To Document :
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