Beam propagation modeling of polarization rotation in deeply etched semiconductor bent waveguides

Author

Obayya, S.S.A. ; Rahman, B.M.A. ; Grattan, K.T.V. ; El-Mikati, H.A.

Author_Institution

Dept. of Electr., Electron. & Inf. Eng., City Univ., London, UK

Volume

13

Issue

7

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

681

Lastpage

683

Abstract

A rigorous study of polarization rotation in deeply etched semiconductor optical waveguide bends has been carried out and results are presented, using the finite element-based fully vectorial beam propagation method. It has been shown that by careful adjustment of the waveguide width, the slant sidewalls and the bending radius, a very compact polarization rotator design, only 60 μm long, with extremely low overall loss, and nearly 100% polarization conversion ratio can be achieved.

Keywords

etching; finite element analysis; light propagation; optical losses; optical polarisers; optical waveguide theory; optical waveguides; waveguide discontinuities; 60 mum; beam propagation modeling; bending radius; deeply etched semiconductor bent waveguides; extremely low overall loss; finite element-based fully vectorial beam propagation method; optical waveguide bends; polarization conversion ratio; polarization rotation; rigorous study; slant sidewalls; very compact polarization rotator design; waveguide width; Etching; Finite element methods; Indium phosphide; Optical losses; Optical polarization; Optical propagation; Optical waveguides; Semiconductor waveguides; Tellurium; Ultraviolet sources;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.930413

Filename

930413