Temperature sensor using BJT-MOSFET pair

Author

Wang, R.-L. ; Yu, C.-W. ; Yu, Chu ; Liu, Tin-Hao ; Yeh, Chao-Ming ; Lin, Chih-Fan ; Tsai, Hann-Huei ; Juang, Ying-Zong

Author_Institution

Dept. of Electron. Eng., Nat. Kaohsiung Normal Univ., Kaohsiung, Taiwan

Volume

48

Issue

9

fYear

2012

Firstpage

503

Lastpage

504

Abstract

A temperature sensor using the cascade configuration of a pnp bipolar junction transistor (BJT) and a p-type metal-oxide-semiconductor field effect transistor (PMOSFET) was designed and measured. Under a biasing current proportional to absolute temperature for a pnp BJT and a temperature-stable biasing current for a PMOSFET, the plots of emitter-base and source-gate bias voltages against temperature show nearly complementary nonlinear characteristics. Therefore, a temperature sensor of which the output is the sum of the two bias voltages will exhibit good linearity. For a temperature range from 0 to 125°C, the fabricated temperature sensor has the sensitivity of °3.39°mV/°C or so with linearity up to 99.996°.

Keywords

MOSFET; bipolar transistors; temperature sensors; BJT-MOSFET pair; PMOSFET; complementary nonlinear characteristics; emitter-base; p-type metal-oxide-semiconductor field effect transistor; pnp bipolar junction transistor; source-gate bias voltages; temperature 0 degC to 125 degC; temperature sensor; temperature-stable biasing current;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2012.0380

Filename

6190836