DocumentCode :
1504724
Title :
Performance of 5-nm a-IGZO TFTs With Various Channel Lengths and an Etch Stopper Manufactured by Back UV Exposure
Author :
Mativenga, Mallory ; Geng, Di ; Chang, Jeff Hsin ; Tredwell, Timothy J. ; Jang, Jin
Author_Institution :
Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea
Volume :
33
Issue :
6
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
824
Lastpage :
826
Abstract :
Stable and fast-switching thin-film transistors and circuits incorporating 5-nm-thick amorphous-InGaZnO (a-IGZO) active layers are demonstrated, and their dependence on channel length is studied. Turn-on voltage shifts in the positive gate voltage direction as the channel length increases. A low area density of defects in the bulk a-IGZO, which is ultrathin, results in good stability under positive bias stress, whereas interdiffusion of electrons/electron donors from the highly doped source and drain regions to the channel edges results in the dependence of turn-on voltage on channel length. Stable operation of an 11-stage ring oscillator is achieved with a propagation delay time of ~97 μs/stage due to reduced gate-to-drain overlap capacitance and parasitic resistances.
Keywords :
amorphous semiconductors; gallium compounds; indium compounds; thin film transistors; ultraviolet radiation effects; zinc compounds; 11-stage ring oscillator; InGaZnO; a-IGZO TFT; amorphous-InGaZnO thin-film transistor; back UV exposure; channel lengths; etch stopper; fast-switching thin-film transistor; size 5 nm; stable thin-film transistor; turn-on voltage shifts; Circuit stability; Inverters; Logic gates; Ring oscillators; Stress; Thin film transistors; Amorphous InGaZnO (a-IGZO); inverter; ring oscillator; thin-film transistor (TFT); ultrathin;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2191132
Filename :
6191309
Link To Document :
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