Title :
Extraction of sheet resistance from four-terminal sheet resistors replicated in monocrystalline films with nonplanar geometries
Author :
Cresswell, Michael W. ; Guillaume, Nadine M P ; Lee, William E. ; Allen, Richard A. ; Guthrie, William F. ; Ghoshtagore, Rathindra N. ; Osborne, Zoe E. ; Sullivan, Neal ; Linholm, Loren W.
Author_Institution :
Semicond. Electron. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fDate :
5/1/1999 12:00:00 AM
Abstract :
This paper describes limitations of conventional methods of extracting sheet resistance from four-terminal sheet resistors incorporated into electrical linewidth test structures that are patterned in (110) monocrystalline silicon-on-insulator (SOI) films. Nonplanar sections of these structures render the extraction of sheet resistance by conventional techniques subject to systematic errors. The errors are addressed here by algorithms incorporating the results of finite-element current flow analysis. The intended end application is to facilitate the use of the uniquely high repeatability and low cost of electrical critical dimension (CD) metrology as a secondary reference in a traceability path for CD-reference artifacts
Keywords :
electric resistance measurement; finite element analysis; measurement errors; semiconductor thin films; silicon-on-insulator; CD reference artifact; Si; electrical critical dimension metrology; electrical linewidth test structure; finite element current flow analysis; four-terminal sheet resistor; monocrystalline SOI film; nonplanar geometry; parameter extraction; sheet resistance; systematic error; Atomic measurements; Electric resistance; Electric variables measurement; Electrical resistance measurement; Force measurement; Metrology; Resistors; Scanning electron microscopy; Semiconductor films; Silicon on insulator technology;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
