Improved a-Si:H TFT pixel electrode circuits for active-matrix organic light emitting displays

Author

He, Yi ; Hattori, Reiji ; Kanicki, Jerzy

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

48

Issue

7

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

1322

Lastpage

1325

Abstract

Two improved four thin-film-transistors (TFTs) pixel electrode circuits based on hydrogenated amorphous silicon (a-Si:H) technology have been designed. Both circuits can provide a constant output current level and can be automatically adjusted for TFT threshold voltage variations. The circuit simulation results indicate that an excellent linearity between the output current and input current can be established. An output current level higher than ~5 μA can be achieved with these circuits. This current level can provide a pixel electrode brightness higher than 1000 cd/m² with the organic light-emitting device (OLED) having an external quantum efficiency of 1%. These pixel electrode circuits can potentially be used for the active-matrix organic light-emitting displays (AM-OLEDs)

Keywords

amorphous semiconductors; display instrumentation; elemental semiconductors; field effect integrated circuits; hydrogen; silicon; thin film transistors; Si:H; TFT pixel electrode circuits; TFT threshold voltage variations adjustment; active-matrix organic light emitting displays; constant output current level; external quantum efficiency; four TFT circuits; hydrogenated amorphous Si technology; linearity; pixel electrode brightness; thin-film-transistors; Active matrix technology; Amorphous silicon; Brightness; Circuit simulation; Electrodes; Flat panel displays; Linearity; Organic light emitting diodes; Thin film transistors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.930646

Filename

930646