SOI MOSFET structure with a junction-type body contact for suppression of pass gate leakage

Author

Chung, In-Young ; Park, Young June ; Min, Hong Shick

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

Volume

48

Issue

7

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

1360

Lastpage

1365

Abstract

A SOI MOSFET structure with a junction-type body contact [body-junctioned-to-gate (BJG)] is proposed to effectively suppress the parasitic bipolar effect in all kinds of MOSFETs including the pass transistor, which can be realized with compact design and simple processes. It utilizes the buried contact process to minimize the area consumption. Various on-chip test circuits have been fabricated to verify the BJG characteristics and it is shown that the proposed structure provides nearly perfect immunity against the circuit failure caused by the parasitic bipolar effect and an excellent speed performance, so that it can be a promising candidate for the SOI circuits

Keywords

MOSFET; leakage currents; low-power electronics; semiconductor device measurement; silicon-on-insulator; BJG characteristics; MOSFETs; SOI MOSFET structure; Si; area consumption; buried contact process; circuit failure; junction-type body contact; on-chip test circuits; parasitic bipolar effect; pass gate leakage; pass transistor; speed performance; Circuit testing; Contacts; Gate leakage; Helium; Immune system; MOSFET circuits; Power MOSFET; Process design; Schottky diodes; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.930652

Filename

930652