Title :
Comprehensive study on a novel bidirectional tunneling program/erase NOR-type (BiNOR) 3-D flash memory cell
Author :
Chou, Amy Hsiu-Fen ; Yang, Evans Ching-Song ; Liu, Cheng-Jye ; Pong, Hsiu-Hsiang ; Liaw, Ming-Chi ; Chao, Ten-Sen ; King, Ya-Chin ; Hwang, Huey-liang ; Hsu, Charles Ching-Hsiang
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fDate :
7/1/2001 12:00:00 AM
Abstract :
In this paper a recently proposed bidirectional tunneling program/erase (P/E) NOR-type (BiNOR) flash memory is extensively investigated. With the designated localized p-well structure, uniform Fowler-Nordheim (FN) tunneling is first fulfilled for both program and erase operations in NOR-type array architecture to facilitate low power applications. The BiNOR flash memory guarantees excellent tunnel oxide reliability and is provided with fast random access capability. Furthermore, a three-dimensional (3D) current path in addition to the conventional two-dimensional (2D) conduction is proven to improve the read performance. The BiNOR flash memory is thus promising for low-power, high-speed, and high-reliability nonvolatile memory applications
Keywords :
NOR circuits; cellular arrays; flash memories; integrated circuit reliability; low-power electronics; tunnelling; 3D flash memory cell; bidirectional tunneling program/erase NOR-type circuit; fast random access capability; high-reliability nonvolatile memory applications; localized p-well structure; low power applications; read performance; tunnel oxide reliability; uniform Fowler-Nordheim tunneling; Chaos; Circuits; EPROM; Flash memory; Flash memory cells; Hot carriers; Laboratories; Nonvolatile memory; Tunneling; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
