DocumentCode :
1505038
Title :
Improved Uniformity of Sequential Lateral Solidification Thin-Film Transistors
Author :
Kang, Myung-Koo ; Kim, Si Joon ; Kim, Hyun Jae
Author_Institution :
Samsung Mobile Display, Cheonan, South Korea
Volume :
32
Issue :
6
fYear :
2011
fDate :
6/1/2011 12:00:00 AM
Firstpage :
767
Lastpage :
769
Abstract :
The uniformity of threshold voltage (Vth) in sequential lateral solidification (SLS) thin-film transistors (TFTs) is investigated. Some SLS TFTs have higher Vth values than others, which causes problems in applications requiring a high level of TFT uniformity such as active-matrix organic light-emitting diode displays. Focused ion beam observations revealed that all TFTs with high Vth values had protrusions 3000- 7000 Å from the junction. Using a smart tilted-channel structure decreased the Vth variation to less than 0.2 V.
Keywords :
LED displays; focused ion beam technology; thin film transistors; active-matrix organic light-emitting diode displays; focused ion beam; sequential lateral solidification thin-film transistors; smart tilted-channel structure; threshold voltage uniformity; Junctions; Lasers; Logic gates; Scanning electron microscopy; Silicon; Thin film transistors; Crystallization; semiconductor thin films; silicon; thin-film transistors (TFTs);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2131112
Filename :
5756448
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1505038
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