245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

Author

Lee, Dong Seup ; Chung, Jinwook W. ; Wang, Han ; Gao, Xiang ; Guo, Shiping ; Fay, Patrick ; Palacios, Tomàs

Author_Institution

Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA

Volume

32

Issue

6

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

755

Lastpage

757

Abstract

We report lattice-matched In_0.17Al_0.83N/GaN high-electron mobility transistors on a SiC substrate with a record current gain cutoff frequency (fT). The key to this performance is the use of an oxygen plasma treatment to form a thin oxide layer on the InAlN barrier and to reduce the gate leakage current by more than two orders of magnitude. In addition, the RF transconductance (g_m) collapse is reduced in the O₂-treated devices, which results in a significant improvement in the f_T . In a transistor with a gate length of 30 nm, an f_T of 245 GHz is achieved, the highest value ever reported in GaN-based field-effect transistors.

Keywords

high electron mobility transistors; indium compounds; InAlN-GaN; InAlN/GaN HEMT; RF transconductance; frequency 245 GHz; high-electron mobility transistors; oxygen plasma treatment; Gallium nitride; HEMTs; Logic gates; MODFETs; Performance evaluation; Plasmas; Radio frequency; AlN; GaN; InAlN; current gain cutoff frequency $(f_{T})$; high-electron-mobility transistor (HEMT); oxygen plasma; transconductance $(g_{m})$;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2132751

Filename

5756449