• DocumentCode
    1505071
  • Title

    An Indium-Free Transparent Resistive Switching Random Access Memory

  • Author

    Zheng, K. ; Sun, X.W. ; Zhao, J.L. ; Wang, Y. ; Yu, H.Y. ; Demir, H.V. ; Teo, K.L.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
  • Volume
    32
  • Issue
    6
  • fYear
    2011
  • fDate
    6/1/2011 12:00:00 AM
  • Firstpage
    797
  • Lastpage
    799
  • Abstract
    We report an indium-free transparent resistive switching random access memory device based on GZO-Ga2O3-ZnO-Ga2O3 -GZO structure by metal-organic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature. The conduction and resistive switching mechanism was discussed based on filament theory.
  • Keywords
    bipolar memory circuits; gallium compounds; random-access storage; zinc compounds; ZnO:Ga-Ga2O3-ZnO-Ga2O3-ZnO:Ga; bipolar resistive switching; conduction mechanism; cycling characteristics; filament theory; indium-free transparent resistive switching random access memory; metal-organic chemical vapor deposition; retention time; visible transmittance; Electrodes; Ions; Random access memory; Sun; Switches; Zinc oxide; GZO; ZnO; indium free; transparent resistive switching;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2126017
  • Filename
    5756452
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1505071