Comprehensive study on low-frequency noise characteristics in surface channel SOI CMOSFETs and device design optimization for RF ICs

Author

Tseng, Ying-Che ; Huang, W. Margaret ; Mendicino, Micheal ; Monk, David J. ; Welch, Pamela J. ; Woo, Jason C S

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

48

Issue

7

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

1428

Lastpage

1437

Abstract

Low-frequency (LF) noise, a key figure-of-merit to evaluate device technology for RF systems on a chip, is a significant obstacle for CMOS technology, especially for partially depleted (PD) silicon-on-insulator (SOI) CMOS due to the well-known kink-induced noise overshoot. While the dc kink effect can be suppressed by either using body contact technologies or shifting toward fully depleted (FD) operation, the noise overshoot phenomena still resides at high frequency for either FD SOI or poor body-tied (BT) SOI CMOSFETs. In this paper, floating body-induced excess noise in SOI CMOS technology is addressed, including the impact from floating body effect, pre-dc kink operation, and gate overdrive, followed by the proposal of a universal LF excess noise model. As the physical mechanism behind excess noise is identified, this paper concludes with the suggestion of a device design methodology to optimize LF noise in SOI CMOSFET technology

Keywords

CMOS integrated circuits; MOSFET; semiconductor device noise; Si; device design optimization; floating body-induced excess noise; gate overdrive; kink-induced noise overshoot; low-frequency noise; partially depleted SOI CMOS; surface channel SOI CMOSFET; CMOS technology; CMOSFETs; Design methodology; Low-frequency noise; Noise figure; Noise measurement; Proposals; Radio frequency; Semiconductor device modeling; Silicon on insulator technology;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.930662

Filename

930662