Title :
A quasi-SOI power MOSFET for radio frequency applications formed by reversed silicon wafer direct bonding
Author :
Matsumoto, Satoshi ; Hiraoka, Yasushi ; Sakai, Tatsuo ; Yachi, Toshiaki ; Ishiyama, Toshihiko ; Kosugi, Toshihiko ; Kamitsuna, Hideki ; Muraguchi, Masahiro
Author_Institution :
NTT Telecommun. Energy Labs., Kanagawa, Japan
fDate :
7/1/2001 12:00:00 AM
Abstract :
A quasi-SOI power MOSFET for radio frequency (RF) applications was fabricated by reversed silicon wafer direct bonding (RSDB). Its breakdown voltage was more than twice that of the conventional SOI power MOSFET and its other dc characteristics were almost the same. Its maximum oscillation frequency was about 15% higher than that of the conventional SOI power MOSFET. The power-added efficiency (PAE) of the quasi- SOI power MOSFET was higher than the SOI one. It showed excellent PAE of 68% at a drain bias of 3.6 V
Keywords :
UHF field effect transistors; microwave field effect transistors; power MOSFET; semiconductor device breakdown; silicon-on-insulator; wafer bonding; 3.6 V; 68 percent; Si; breakdown voltage; dc characteristics; drain bias; oscillation frequency; power-added efficiency; quasi-SOI power MOSFET; radio frequency applications; reversed silicon wafer direct bonding; CMOS technology; Integrated circuit technology; MMICs; MOSFET circuits; Power MOSFET; Radio frequency; Silicon; Substrates; Transistors; Wafer bonding;
Journal_Title :
Electron Devices, IEEE Transactions on
