Title :
Channel length extraction for DMOS transistors using capacitance-voltage measurements
Author :
Valtonen, Roger ; Olsson, Jörgen ; De Wolf, Peter
Author_Institution :
Angstrom Lab., Uppsala Univ., Sweden
fDate :
7/1/2001 12:00:00 AM
Abstract :
This paper presents a new measurement method for extraction of submicrometer channel lengths in double diffused MOS (DMOS) transistors. The method is based on capacitance-voltage (CV) measurements of the gate to p-base and the gate to drain capacitance. A channel length of 0.3 μm has been measured on DMOS transistors. Numerical device simulations and small-signal capacitance simulations support the result and the measurement principle along with scanning capacitance microscopy (SCM) measurements
Keywords :
MOSFET; characteristics measurement; semiconductor device measurement; semiconductor device models; semiconductor device testing; 0.3 micron; DMOS transistors; capacitance-voltage measurements; channel length extraction; gate to drain capacitance; gate to p-base capacitance; numerical device simulations; scanning capacitance microscopy; small-signal capacitance simulations; submicrometer channel lengths; Capacitance measurement; Capacitance-voltage characteristics; Length measurement; MOSFETs; Microscopy; Motor drives; Numerical simulation; Power electronics; Semiconductor device measurement; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
