Title :
High frequency performance of large-grain polysilicon-on-insulator MOSFETs
Author :
Wang, Hongmei ; Singh, Jaskirat ; Lam, Sang ; Chan, Mansun
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
fDate :
7/1/2001 12:00:00 AM
Abstract :
Large-grain polysilicon-on-insulator (LPSOI) MOSFETs, formed from amorphous silicon by high-temperature metal-induced-lateral-crystallization (MILC) have been reported to operate in gigahertz range for the first time. Large dimensional (W/L=240/1.2 μm) LPSOI NMOSFETs and PMOSFETs display a maximum transconductance (gm max)=68 mS/mm and 48 mS/mm at VDS =3 V, respectively. The unity short circuit current gain frequencies (fT) of NMOSFET and PMOSFET have been found to reach 3.4 GHz and 2.6 GHz at channel length of 1.2 μm. With channel length scaling, higher fT can be achieved and have been demonstrated with the measured value of 5.1 GHz fT for PMOSFET with a channel length of 0.7 μm. The fT value obtained is the highest among silicon FETs fabricated on nonsingle crystal silicon substrates
Keywords :
MOSFET; elemental semiconductors; grain size; recrystallisation; silicon; silicon-on-insulator; 0.7 micron; 1.2 micron; 2.6 GHz; 3 V; 3.4 GHz; 48 mS/mm; 5.1 GHz; 68 mS/mm; NMOSFET; PMOSFET; Si; channel length; channel length scaling; high-temperature metal-induced-lateral-crystallization; large-grain polysilicon-on-insulator MOSFETs; transconductance; unity short circuit current gain frequencies; Amorphous silicon; Crystallization; Fabrication; Flexible printed circuits; Frequency; Grain boundaries; Grain size; MOSFETs; Substrates; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
