Title :
LC-VCO Design Optimization Methodology Based on the
Ratio for Nanometer CMOS Technologies
Author :
Fiorelli, Rafaella ; Peralías, Eduardo J. ; Silveira, Fernando
Author_Institution :
Inst. de Microelectron. de Sevilla, Centro Nac. de Microelectron.-Consejo Super. de Investiga ciones Cienti´´ficas (CNM-CSIC), Seville, Spain
fDate :
7/1/2011 12:00:00 AM
Abstract :
In this paper, an LC voltage-controlled oscillator (LC VCO) design optimization methodology based on the gm/ID tech nique and on the exploration of all inversion regions of the MOS transistor (MOST) is presented. An in-depth study of the com promises between phase noise and current consumption permits optimization of the design for given specifications. Semiempirical models of MOSTs and inductors, obtained by simulation, jointly with analytical phase noise models, allow to get a design space map where the design tradeoffs are easily identified. Four LC-VCO designs in different inversion regions in a 90-nm CMOS process are obtained with the proposed methodology and verified with electrical simulations. Finally, the implementation and measurements are presented for a 2.4-GHz VCO operating in moderate inversion. The designed VCO draws 440 μA from a 1.2-V power supply and presents a phase noise of -106.2 dBc/Hz at 400 kHz from the carrier.
Keywords :
MOSFET; integrated circuit design; low-power electronics; voltage-controlled oscillators; LC voltage-controlled oscillator; LC-VCO design optimization methodology; MOS transistor; current 440 muA; frequency 2.4 GHz; frequency 400 kHz; nanometer CMOS technologies; voltage 1.2 V; Capacitance; Inductors; MOSFETs; Phase noise; Voltage-controlled oscillators; $g_m/I_D$; All inversion regions; LC voltage-controlled oscillator (LC-VCO); design methodology; low power; nanometer CMOS;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2011.2132735