Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates

Author

Cheng, Zhi-Yuan ; Currie, Matthew T. ; Leitz, Chris W. ; Taraschi, Gianni ; Fitzgerald, Eugene A. ; HOyt, Judy L. ; Antoniadas, Dimitri A.

Author_Institution

Dept. of Mater. Sci. & Eng., MIT, Cambridge, MA, USA

Volume

22

Issue

7

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

321

Lastpage

323

Abstract

We demonstrate electron mobility enhancement in strained-Si n-MOSFETs fabricated on relaxed Si/sub 1-x/Ge/sub x/-on-insulator (SGOI) substrates with a high Ge content of 25%. The substrates were fabricated by wafer bonding and etch-back utilizing a 20% Ge layer as an etch stop. Epitaxial regrowth was used to produce the upper portion of the Si/sub 0.75/Ge/sub 0.26/ and the surface strained Si layer. Large-area strained-Si n-MOSFETs were fabricated on this SGOI substrate. The measured electron mobility shows significant enhancement over both the universal mobility and that of co-processed bulk-Si MOSFETs. This SGOI process has a low thermal budget and thus is compatible with a wide range of Ge contents in Si/sub 1-x/Ge/sub x/ layer.

Keywords

Ge-Si alloys; MOSFET; electron mobility; elemental semiconductors; etching; semiconductor materials; silicon; substrates; wafer bonding; SGOI process; SGOI substrate; Si-SiGe-SiO/sub 2/; SiGe; SiGe-on-insulator substrates; electron mobility enhancement; epitaxial regrowth; etch-back; high Ge content; large-area NMOSFETs; n-channel MOSFETs; strained-Si n-MOSFETs; surface strained Si layer; wafer bonding; Electron mobility; Etching; Fabrication; Germanium silicon alloys; MOSFET circuits; Materials science and technology; Silicon germanium; Silicon on insulator technology; Substrates; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.930678

Filename

930678