Title :
Temperature dependency of 0.1 μm partially depleted SOI CMOSFET
Author :
Wen-Kuan Yeh ; Chiutsung Huang ; Mao-Chieh Chen
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Taiwan
fDate :
7/1/2001 12:00:00 AM
Abstract :
This work investigates the floating body effect (FBE) on the partially depleted SOI devices at various temperatures for high-performance 0.1 μm MOSFET. The thermal effect on the device´s characteristics was investigated with respect to the body contacted MOSFET (BC-SOI) and floating body MOSFET without body contacted (FB-SOI). It is found that the threshold voltage (Vth) and the off state drain current (I/sub OFF/) of the BC-SOI devices are more temperature sensitive than those of the FB-SOI devices. For operation at higher temperatures, there is no apparent difference in driving capability between the BC-SOI and FB-SOI MOSFETs.
Keywords :
MOSFET; leakage currents; low-power electronics; semiconductor device reliability; silicon-on-insulator; 0.1 micron; Si; body contacted MOSFET; driving capability; floating body effect; off state drain current; partially depleted SOI CMOSFET; thermal effect; threshold voltage; CMOS technology; CMOSFETs; Capacitance; Dielectric devices; Ion implantation; MOSFET circuits; Scalability; Temperature dependence; Temperature sensors; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
