Title :
Post-soft-breakdown characteristics of deep submicron NMOSFETs with ultrathin gate oxide
Author :
Tsai, Min-Yu ; Lin, Horng-Chih ; Lee, Da-Yuan ; Huang, Tiao-Yuan
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
7/1/2001 12:00:00 AM
Abstract :
The impacts of soft-breakdown (SBD) on the characteristics of deep sub-micron NMOSFETs were investigated. It is shown that the BD location plays a crucial role in the post-BD switching function of the device. When BD occurs at the channel, the turn-on behavior of the drain current would not be significantly affected, which is in strong contrast to the case of ED at the drain, Nevertheless, significant increase in gate current is observed in the off-state when the gate voltage is more negative than -1 V. Its origin is identified to be due to the action of two parasitic bipolar transistors formed after SBD occurrence at the channel.
Keywords :
MOSFET; insulating thin films; leakage currents; semiconductor device breakdown; semiconductor device reliability; deep submicron NMOSFETs; drain current; gate current; gate voltage; parasitic bipolar transistors; post-BD switching function; post-soft-breakdown characteristics; turn-on behavior; ultrathin gate oxide; Bipolar transistors; Electric breakdown; Event detection; Gate leakage; Laboratories; Leakage current; MOSFETs; Temperature; Voltage;
Journal_Title :
Electron Device Letters, IEEE
