DocumentCode :
1505258
Title :
Monolithic HBV-Based 282-GHz Tripler With 31-mW Output Power
Author :
Vukusic, Josip ; Bryllert, Tomas ; Olsen, Øistein ; Hanning, Johanna ; Stake, Jan
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Göteborg, Sweden
Volume :
33
Issue :
6
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
800
Lastpage :
802
Abstract :
We present a heterostructure barrier varactor multiplier at 282 GHz. The tripler chip was monolithically fabricated in the InGaAs/InAlAs material system on InP as carrier substrate and mounted in a fix-tuned waveguide block. Standard rectangular waveguides WR-10/WR-3 connect the multiplier chip to the respective input/output of the waveguide block. Measurements produced 31 mW of output power and a minimum conversion loss of 11.6 dB (7% efficiency). The device dimensions and their electrical and thermal influences are also presented.
Keywords :
frequency multipliers; rectangular waveguides; varactors; InGaAs-InAlAs; InP; carrier substrate; fix-tuned waveguide block; frequency 282 GHz; heterostructure barrier varactor multiplier; material system; monolithic HBV-based tripler; multiplier chip; power 31 mW; standard rectangular waveguides; tripler chip; Electromagnetic waveguides; Fabrication; Materials; Power generation; Schottky diodes; Semiconductor device measurement; Varactors; Frequency multipliers; heterostructure barrier varactors (HBVs); indium phosphide; millimeter wave integrated circuits;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2191385
Filename :
6192287
Link To Document :
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