Effect of the loaded quality factor on power efficiency for CMOS class-E RF tuned power amplifiers

Author

Tu, Steve Hung-Lung ; Toumazou, Chris

Author_Institution

Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK

Volume

46

Issue

5

fYear

1999

fDate

5/1/1999 12:00:00 AM

Firstpage

628

Lastpage

634

Abstract

An analytical expression for the harmonic distortion and power efficiency for class-E power amplifiers is derived. By considering the nonideal behavior of the switching device, we explore the dependence of power efficiency on the quality factor of the resonant circuit, as well as the current decay angle of the active device. The result is very useful since it predicts the power efficiency in terms of circuit parameters. The analytical expression is supported by good agreement with circuit simulations

Keywords

CMOS analogue integrated circuits; Q-factor; harmonic distortion; nonlinear network analysis; power amplifiers; radiofrequency amplifiers; CMOS RF tuned power amplifiers; active device current decay angle; circuit parameters; class-E power amplifiers; harmonic distortion; loaded quality factor; nonideal behavior; power efficiency; resonant circuit Q-factor; switching device; Circuit simulation; Harmonic distortion; High power amplifiers; Inductors; Power amplifiers; Q factor; RLC circuits; Radio frequency; Radiofrequency amplifiers; Switching circuits;

fLanguage

English

Journal_Title

Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on

Publisher

ieee

ISSN

1057-7122

Type

jour

DOI

10.1109/81.762928

Filename

762928