Title :
Effect of the loaded quality factor on power efficiency for CMOS class-E RF tuned power amplifiers
Author :
Tu, Steve Hung-Lung ; Toumazou, Chris
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
fDate :
5/1/1999 12:00:00 AM
Abstract :
An analytical expression for the harmonic distortion and power efficiency for class-E power amplifiers is derived. By considering the nonideal behavior of the switching device, we explore the dependence of power efficiency on the quality factor of the resonant circuit, as well as the current decay angle of the active device. The result is very useful since it predicts the power efficiency in terms of circuit parameters. The analytical expression is supported by good agreement with circuit simulations
Keywords :
CMOS analogue integrated circuits; Q-factor; harmonic distortion; nonlinear network analysis; power amplifiers; radiofrequency amplifiers; CMOS RF tuned power amplifiers; active device current decay angle; circuit parameters; class-E power amplifiers; harmonic distortion; loaded quality factor; nonideal behavior; power efficiency; resonant circuit Q-factor; switching device; Circuit simulation; Harmonic distortion; High power amplifiers; Inductors; Power amplifiers; Q factor; RLC circuits; Radio frequency; Radiofrequency amplifiers; Switching circuits;
Journal_Title :
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
