TiN Thickness Impact on BTI Performance

Author

Chen, Chien Liang ; King, Ya-Chin

Author_Institution

Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

32

Issue

6

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

707

Lastpage

709

Abstract

In this letter, we investigate the effects of the TiN metal-gate (MG) electrode on bias temperature instability (BTI) in high-k/MG metal-oxide-semiconductor field-effect transistors. Experimental data show that a thicker TiN film effectively improves bias temperature stability. The thick TiN layer prevents oxygen diffusion toward the α-Si gate electrode; therefore, it suppresses the number of oxygen vacancies in the LaO/HfSiON gate dielectric stack, lessens BTI degradation, and improves interface quality.

Keywords

MOSFET; diffusion; high-k dielectric thin films; thickness measurement; titanium compounds; BTI degradation; BTI performance; MG electrode; TiN; bias temperature instability; bias temperature stability; gate dielectric stack; high-k/MG metal-oxide-semiconductor field-effect transistors; interface quality; metal-gate electrode; oxygen diffusion; oxygen vacancy; thickness impact; Electrodes; Logic gates; MOSFETs; Stress; Threshold voltage; Tin; $D_{rm it}$; Bias temperature instability (BTI); TiN metal-gate (MG) electrode; component; high- $k$ (HK) gate dielectrics;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2125941

Filename

5756636