Modeling and Separate Extraction of Gate-Bias- and Channel-Length-Dependent Intrinsic and Extrinsic Source–Drain Resistances in MOSFETs

A new technique for a separate extraction of the current-path-dependent resistance (R_SD0) from the contact-dependent source and drain resistances (R_Se and R_De) is reported for a single MOSFET. We also report a technique for a separation of V_GS-dependent source and drain resistance (R_SDi) from the V_GS- and L_eff-dependent channel resistance (R_ch) with multiple MOSFETs. We confirm the proposed techniques applied to n-channel MOSFETs with various W/L combinations and obtain R_Se = 10.5 - 12.4 Ω , R_De ≅ 12.7 Ω, and R_SD0 = 4.7 Ω for W = 10 μm. V_GS-dependent but L-independent R_SDi is extracted to be 2.8 - 4.2 Ω.