A 630-mS/mm GaAs MESFET with Au/WSiN refractory metal gate

Author

Onodera, K. ; Tokumitsu, M. ; Sugitani, S. ; Yamane, Y. ; Asai, K.

Author_Institution

NTT LSI Lab., Kanagawa, Japan

Volume

9

Issue

8

fYear

1988

Firstpage

417

Lastpage

418

Abstract

GaAs MESFET´s with a gate length as low as 0.2 mu m have been successfully fabricated with Au/WSiN refractory metal gate n/sup +/-self-aligned ion-implantation technology. A very thin channel layer with high carrier concentration was realized with 10-keV ion implantation of Si and rapid thermal annealing. Low-energy implantation of the n/sup +/-contact regions was examined to reduce substrate leakage current. The 0.2- mu m gate-length devices exhibited a maximum transconductance of 630 mS/mm and an intrinsic transconductance of 920 mS/mm at a threshold voltage of -0.14 V.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; annealing; gallium arsenide; ion implantation; silicon; -0.14 V; 10 keV; Au-WSiN; GaAs; MESFET; carrier concentration; gate length; intrinsic transconductance; ion implantation; maximum transconductance; n/sup +/-self-aligned ion-implantation technology; rapid thermal annealing; refractory metal gate; substrate leakage current; threshold voltage; Gallium arsenide; Gold; Implants; Ion implantation; Leakage current; MESFETs; Rapid thermal annealing; Substrates; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.763

Filename

763