Planar inductively coupled plasmas operated with low and high radio frequencies

Author

Tuszewski, Michel

Author_Institution

Los Alamos Nat. Lab., NM, USA

Volume

27

Issue

1

fYear

1999

fDate

2/1/1999 12:00:00 AM

Firstpage

68

Lastpage

69

Abstract

Planar inductively coupled plasmas (ICPs) powered with 13.56 MHz radio frequency (RF) are used increasingly by the semiconductor industry for close-coupled etching processes. Two planar ICPs operated with 0.46 and 13.56 MHz RF are described. Low-pressure argon discharges are compared in the same vacuum chamber. The two planar ICPs generate nearly identical plasmas, within experimental uncertainties, for similar gas pressures and RF powers. The ICP operation proves significantly easier with low RF frequency

Keywords

argon; high-frequency discharges; plasma density; plasma materials processing; plasma probes; plasma production; sputter etching; 0.46 MHz; 13.56 MHz; Ar; Ar plasma; ICP operation; RF powers; close-coupled etching processes; experimental uncertainties; gas pressures; identical plasmas; low RF frequency; low-pressure discharges; planar ICPs; planar inductively coupled plasmas; radio frequencies; semiconductor industry; vacuum chamber; Coils; Electronics industry; Etching; Fault location; Plasma applications; Plasma density; Plasma sources; Power generation; Probes; Radio frequency;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/27.763041

Filename

763041