DocumentCode
1505782
Title
Molecular dynamics simulations of ion-induced rearrangement of ultrathin oxide films on silicon
Author
Kubota, Alison A. ; Economou, Demeter J.
Author_Institution
Dept. of Chem. Eng., Houston Univ., TX, USA
Volume
27
Issue
1
fYear
1999
fDate
2/1/1999 12:00:00 AM
Firstpage
106
Lastpage
107
Abstract
We present three-dimensional images of ion-irradiated ultrathin oxide films on silicon surfaces, generated from molecular dynamics simulations. The surface has the tendency to form oxide islands as the film is sputtered away by 100 eV Ar+ ions. We also show an image of a “peeling” oxide strand which forms occasionally as a result of ions impacting at an angle of 45° from normal
Keywords
digital simulation; ion-surface impact; island structure; molecular dynamics method; silicon compounds; surface structure; 100 eV; Ar; Ar+ ions; Si; SiO; ion impact angle; ion-induced rearrangement; ion-irradiated ultrathin oxide films; molecular dynamics simulation; molecular dynamics simulations; molecular visualisation software; oxide islands; peeling oxide strand; silicon surfaces; sputtering; surface cleaning; three-dimensional images; time-resolved animation; Argon; Atomic layer deposition; Filling; Plasma temperature; Rough surfaces; Semiconductor films; Silicon; Sputtering; Surface cleaning; Surface roughness;
fLanguage
English
Journal_Title
Plasma Science, IEEE Transactions on
Publisher
ieee
ISSN
0093-3813
Type
jour
DOI
10.1109/27.763068
Filename
763068
Link To Document