Dual-Wavelength Bit Input Optical RAM With Three SOA-XGM Switches

Author

Fitsios, Dimitrios ; Vagionas, Christos ; Kanellos, George Theodore ; Miliou, Amalia ; Pleros, Nikos

Author_Institution

Dept. of Inf., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece

Volume

24

Issue

13

fYear

2012

fDate

7/1/2012 12:00:00 AM

Firstpage

1142

Lastpage

1144

Abstract

We demonstrate a novel all-optical static RAM cell that exploits wavelength diversity in the incoming optical streams towards reducing the number of active elements. The circuit requires only three semiconductor optical amplifiers-cross gain modulation gates for successful read/write operation, yielding a 25% reduction in power consumption compared to state-of-the-art configurations. Proof-of-concept experimental verification is presented at 8 Mb/s using fiber-interconnected off-the-shelf bulk components.

Keywords

flip-flops; optical storage; optical switches; random-access storage; semiconductor optical amplifiers; SOA-XGM switches; active elements; cross gain modulation gates; dual-wavelength bit input optical RAM; fiber-interconnected off-the-shelf bulk components; optical streams; power consumption; semiconductor optical amplifiers; state-of-the-art configurations; successful read/write operation; wavelength diversity; Optical bistability; Optical fibers; Optical polarization; Random access memory; Semiconductor optical amplifiers; Optical flip-flop; optical memory; optical signal processing; semiconductor optical amplifier (SOA);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2197192

Filename

6193124