Title :
Quenching and Reactivation of Electroluminescence by Charge Trapping and Detrapping in Si-Implanted Silicon Nitride Thin Film
Author :
Cen, Zhan Hong ; Chen, T.P. ; Ding, Liang ; Liu, Yang ; Liu, Zhen ; Yang, Ming ; Wong, Jen It ; Goh, W.P. ; Zhu, Fu Rong ; Fung, S.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
In this brief, quenching of electroluminescence (EL) from Si-implanted silicon nitride (SNR) thin film under a forward bias has been observed. The quenching phenomenon is shown to be due to charge trapping in the defect states involved in the radiative recombination. The composite EL bands have different quenching rates, causing a change in the EL spectrum shape by the EL quenching. Release of the trapped charges by a low-temperature annealing at 120degC or an application of a reverse gate bias can partially recover the quenched EL both in the intensity and spectrum shape. The quenching phenomenon poses a serious challenge to the application of Si-implanted SNR thin films in light-emitting devices.
Keywords :
annealing; defect states; electroluminescence; electron traps; electron-hole recombination; light emitting devices; radiation quenching; semiconductor thin films; silicon; silicon compounds; Si-implanted SNR thin film; Si-implanted silicon nitride thin film; SiN; charge detrapping; charge trapping; defect states; electroluminescence quenching; electroluminescence reactivation; forward bias; light-emitting devices; low-temperature annealing; radiative recombination; reverse gate bias; temperature 120 C; Annealing; Electroluminescence; Electroluminescent devices; Ion implantation; Materials science and technology; Semiconductor thin films; Shape; Silicon; Thin film devices; Transistors; Charge trapping; Si-implanted silicon nitride; electroluminescence quenching; reactivation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2033009
