DocumentCode :
1506200
Title :
A generalized Dirichlet principle for smoothing small-signal measurements [MESFET]
Author :
Snider, Arthur David ; Winson, Peter
Author_Institution :
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
Volume :
47
Issue :
5
fYear :
1999
fDate :
5/1/1999 12:00:00 AM
Firstpage :
636
Lastpage :
639
Abstract :
We report the theory, implementation, and results of using a Poisson solver to compensate the measured values of drain conductance and transconductance in a nonlinear metal-semiconductor field-effect transistor so as to render them compatible with a large-signal model. The consequent restructuring of the I-V curves is exhibited
Keywords :
Poisson equation; Schottky gate field effect transistors; equivalent circuits; finite difference methods; nonlinear estimation; semiconductor device models; I-V curves; Poisson solver; drain conductance; field-effect transistor; generalized Dirichlet principle; large-signal model compatibility; nonlinear MESFET; small-signal measurements smoothing; transconductance; Boundary conditions; Electric potential; Electrostatic measurements; Entropy; FETs; MESFETs; Smoothing methods; Thermodynamics; Transconductance; Voltage;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.763166
Filename :
763166
Link To Document :
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