Electroluminescence From Ferromagnetic Fe-Doped ZnO Nanorod Arrays on p-Si

Author

Ling, Bo ; Zhao, Jun Liang ; Sun, Xiao Wei ; Tan, Swee Tiam ; Yang, Yi ; Zhi Li Dong

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ. (NTU), Singapore, Singapore

Volume

57

Issue

8

fYear

2010

Firstpage

1948

Lastpage

1952

Abstract

Vertically aligned Fe-doped ZnO nanorod arrays (ZnO:Fe NRAs) with weak ferromagnetism at room temperature (RT) have been fabricated by in situ doping of Fe into ZnO nanorods (NRs) using a simple thermal chemical vapor deposition method. Structure analyses indicated that the NRs have a single-crystalline wurtzite structure without any detectable segregated cluster or impurity phase. Both photoluminescence and electroluminescence (EL) showed near-band-edge and broad defect-band emissions at RT. The EL from ZnO:Fe NRAs/p-Si light-emitting diodes red shifted with increasing current injections, which was ascribed to the doping effect of the Fe.

Keywords

II-VI semiconductors; chemical vapour deposition; electroluminescence; ferromagnetic materials; iron; light emitting diodes; magnetic semiconductors; nanorods; red shift; semiconductor doping; silicon; wide band gap semiconductors; zinc compounds; Si; ZnO:Fe; broad defect band emissions; electroluminescence; in situ doping; nanorod arrays; near band edge; p-Si light-emitting diodes; photoluminescence; red shift; single-crystalline wurtzite structure; structure analysis; temperature 293 K to 298 K; thermal chemical vapor deposition; weak ferromagnetism; Chemical vapor deposition; Doping; Electroluminescence; Impurities; Iron; Light emitting diodes; Phase detection; Photoluminescence; Temperature; Zinc oxide; Doping; light-emitting diodes (LEDs); zinc compounds;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2050102

Filename

5475211