DocumentCode
1506533
Title
High-Saturation-Power and High-Speed Ge-on-SOI p-i-n Photodetectors
Author
Xue, Hai-Yun ; Xue, Chun-Lai ; Cheng, Bu-Wen ; Yu, Yu-De ; Wang, Qi-Ming
Author_Institution
State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing, China
Volume
31
Issue
7
fYear
2010
fDate
7/1/2010 12:00:00 AM
Firstpage
701
Lastpage
703
Abstract
Ge-on-silicon-on-insulator p-i-n photodetectors were fabricated using an ultralow-temperature Ge buffer by ultrahigh-vacuum chemical vapor deposition. For a detector of 70-m diameter, the 1-dB small-signal compression power was about 110.5 mW. The 3-dB bandwidth at 3-V reverse bias was 13.4 GHz.
Keywords
chemical vapour deposition; photodetectors; silicon-on-insulator; high-saturation-power Ge-on-SOI p-i-n photodetectors; high-speed Ge-on-SOI p-i-n photodetectors; silicon-on-insulator; ultrahigh-vacuum chemical vapor deposition; ultralow-temperature Ge buffer; Germanium; photodetectors; saturation power; silicon-on-insulator (SOI) technology; ultrahigh-vacuum chemical vapor deposition (UHV/CVD);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2048997
Filename
5475259
Link To Document