DocumentCode
150654
Title
A K-band BiCMOS low duty-cycle resistive mixer
Author
Magnani, A. ; Viallon, Christophe ; Burciu, Ioan ; Epert, Thomas ; Borgarino, Mattia ; Parra, T.
Author_Institution
LAAS, Univ. of Toulouse, Toulouse, France
fYear
2014
fDate
19-23 Jan. 2014
Firstpage
95
Lastpage
97
Abstract
This paper presents a double-balanced down-converter based on a low duty-cycle passive mixer that translates a 18.8 GHz RF signal into a 1 GHz IF signal. The resistive mixer is driven by two analog specially designed pulse generators in order to provide very low conversion losses at high frequencies. The chip has been processed using a 0.13μm BiCMOS technology. With a -1.2dBm input LO power, the overall measured conversion gain is 13.2 dB with an estimated contribution of only -2.1 dB from the passive mixer. The measured noise figure is 6.3 dB. The input-referred 1 dB compression point, hardly limited by the IF amp, is -25.7 dB, with -5dBm for the mixer itself. Total power consumption is 109mW.
Keywords
BiCMOS analogue integrated circuits; microwave mixers; passive networks; BiCMOS technology; IF signal; K-band BiCMOS low duty-cycle resistive mixer; RF signal; analog specially designed pulse generators; conversion losses; double-balanced down-converter; frequency 1 GHz; frequency 18.8 GHz; gain 13.2 dB; low duty-cycle passive mixer; noise figure 6.3 dB; power 109 mW; size 0.13 mum; Gain; Mixers; Noise; Noise measurement; Pulse generation; Radio frequency; Semiconductor device measurement; Low Duty-cycle Passive Mixer; Pulse Generator; Resistive Mixer; Sampling Mixer;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in Rf Systems (SiRF), 2014 IEEE 14th Topical Meeting on
Conference_Location
Newport Beach, CA
Type
conf
DOI
10.1109/SiRF.2014.6828506
Filename
6828506
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