Title :
An extremely low noise heterojunction IMPATT
Author :
Mishra, J.K. ; Panda, A.K. ; Dash, G.N.
Author_Institution :
GM Autonomous Coll., Sambalpur, India
fDate :
12/1/1997 12:00:00 AM
Abstract :
The avalanche noise characteristics of InP/GaInAs (Ga0.47 In0.53As) and InP/GaInAsP (Ga0.33In0.67 As0.7P0.3) double drift region (DDR) heterostructure IMPact Avalanche Transit Time (IMPATTs) have been studied. The heterostructure IMPATT´s in general are found to be less noisy compared to their homostructure counterparts and in particular the InP/GaInAs DDR is found to generate extremely low noise when the ternary layer width is properly selected. A noise measure of 7.7 dB has been observed at 190 GHz for a GaInAs layer width of 140 nm. Further, a study on the noise contribution from the individual space steps of the depletion layer due to individual noise sources in the generation region has revealed some interesting differences between those of homostructure and heterostructure diodes. Finally, a criterion for low-noise design is also suggested
Keywords :
III-V semiconductors; IMPATT diodes; avalanche breakdown; gallium arsenide; indium compounds; millimetre wave diodes; semiconductor device noise; 140 nm; 190 GHz; 7.7 dB; III-V semiconductors; InP-GaInAs; InP-GaInAsP; avalanche noise characteristics; depletion layer; double drift region; generation region; heterojunction IMPATT; heterostructure diodes; low-noise design; noise contribution; ternary layer width; Active noise reduction; Computational modeling; Diodes; Gain measurement; Heterojunctions; Indium phosphide; Noise generators; Physics; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
