Novel frequency quadrupler design covering the entire V-Band in 0.13-μm SiGe process

Author

Shuai Yuan ; Schumacher, Hermann

Author_Institution

Inst. of Electron Devices & Circuits, Ulm Univ., Ulm, Germany

fYear

2014

fDate

19-23 Jan. 2014

Firstpage

101

Lastpage

103

Abstract

This paper presents a novel quadrupler design that adopts the proposed polyphase filter based doubler as the first stage, which generates a differential output signal for the second doubler stage. The polyphase filter based solution features a compact size, a wide bandwidth and a well balanced output. The quadrupler is implemented in a 0.13 μm SiGe:C HBT process, and demonstrates a wide bandwidth of 50 - 75 GHz with only 1.8 dB gain variation, a conversion gain of 12 dB, and a output power of about -1 dBm.

Keywords

Ge-Si alloys; carbon; frequency multipliers; heterojunction bipolar transistors; millimetre wave frequency convertors; C; SiGe; SiGe:C HBT process; V-band; bandwidth 50 GHz to 75 GHz; differential output signal; frequency quadrupler design; gain 1.8 dB; gain 12 dB; polyphase filter based doubler; size 0.13 mum; Gain; Harmonic analysis; Power generation; Power harmonic filters; Power measurement; Silicon germanium; MMIC; SiGe; differential output balance; frequency quadrupler; polyphase filter; push-push doubler;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in Rf Systems (SiRF), 2014 IEEE 14th Topical Meeting on

Conference_Location

Newport Beach, CA

Type

conf

DOI

10.1109/SiRF.2014.6828509

Filename

6828509