Title :
Locking range, phase noise and power spectrum of an injection-locked semiconductor laser
Author :
Lidoyne, O. ; Gallion, P. ; Chabran, C. ; Debarge, G.
Author_Institution :
Dept. Commun., Ecole Nat. Superieure des Telecommun., France
fDate :
6/1/1990 12:00:00 AM
Abstract :
The locking range of an optically injected semiconductor laser is discussed, including the spectral hole burning and lateral carrier diffusion effects. These effects are modelled with a gain suppression coefficient. In addition, an expression for the mean square phase jitter of an injection-locked semiconductor laser is derived when these effects are insignificant. The power spectrum of a locked laser is obtained and compared with experimental results
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser mode locking; optical hole burning; semiconductor junction lasers; AlGaAs; gain suppression coefficient; injection-locked semiconductor laser; lateral carrier diffusion effects; locked laser power spectrum; locking range; mean square phase jitter; optically injected; phase noise; power spectrum; spectral hole burning;
Journal_Title :
Optoelectronics, IEE Proceedings J
