High linearity 1-ohm RF switches with phase-change materials

Author

Jeong-Sun Moon ; Seo, H.-C. ; Le, Dat

Author_Institution

HRL Labs., Malibu, CA, USA

fYear

2014

fDate

19-23 Jan. 2014

Firstpage

7

Lastpage

9

Abstract

We report GeTe-based phase change material RF switches with on-state resistance of 1 ohm and ultra-low loss and highest linearity amongst PCM RF switches. The lowest on-state resistance is 0.06 Ω·mm, which is about 20 times lower than state-of-the-art FET switches. The PCM RF switches are fabricated for the first time in a lateral FET configuration to reduce parasitics, different from the vertical via switches. With on-state resistance of 1 ohm, RF insertion loss is measured less than 0.2 dB. With P1dB > 2 W, the harmonic powers are suppressed greatly up to 1 W RF power at 700 MHz.

Keywords

UHF devices; germanium alloys; microwave switches; phase change materials; tellurium alloys; GeTe; frequency 700 MHz; high linearity RF switch; lateral FET configuration; on-state resistance; parasitic reduction; phase change materials; resistance 1 ohm; ultralow loss RF switch; Electrical resistance measurement; Insertion loss; Linearity; Optical switches; Phase change materials; Radio frequency; Resistance; RF switches; Wireless communications; insertion loss; linearity; phase-change material;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in Rf Systems (SiRF), 2014 IEEE 14th Topical Meeting on

Conference_Location

Newport Beach, CA

Type

conf

DOI

10.1109/SiRF.2014.6828512

Filename

6828512