Title :
High linearity 1-ohm RF switches with phase-change materials
Author :
Jeong-Sun Moon ; Seo, H.-C. ; Le, Dat
Author_Institution :
HRL Labs., Malibu, CA, USA
Abstract :
We report GeTe-based phase change material RF switches with on-state resistance of 1 ohm and ultra-low loss and highest linearity amongst PCM RF switches. The lowest on-state resistance is 0.06 Ω·mm, which is about 20 times lower than state-of-the-art FET switches. The PCM RF switches are fabricated for the first time in a lateral FET configuration to reduce parasitics, different from the vertical via switches. With on-state resistance of 1 ohm, RF insertion loss is measured less than 0.2 dB. With P1dB > 2 W, the harmonic powers are suppressed greatly up to 1 W RF power at 700 MHz.
Keywords :
UHF devices; germanium alloys; microwave switches; phase change materials; tellurium alloys; GeTe; frequency 700 MHz; high linearity RF switch; lateral FET configuration; on-state resistance; parasitic reduction; phase change materials; resistance 1 ohm; ultralow loss RF switch; Electrical resistance measurement; Insertion loss; Linearity; Optical switches; Phase change materials; Radio frequency; Resistance; RF switches; Wireless communications; insertion loss; linearity; phase-change material;
Conference_Titel :
Silicon Monolithic Integrated Circuits in Rf Systems (SiRF), 2014 IEEE 14th Topical Meeting on
Conference_Location :
Newport Beach, CA
DOI :
10.1109/SiRF.2014.6828512
