V-band monolithic low-noise amplifiers using ion-implanted n/sup +/-self-aligned GaAs MESFETs

Author

Onodera, K. ; Sugitani, S. ; Nishimura, K. ; Tokumitsu, M.

Author_Institution

NTT Optical Network Syst. Labs., Kanagawa, Japan

Volume

9

Issue

4

fYear

1999

fDate

4/1/1999 12:00:00 AM

Firstpage

148

Lastpage

150

Abstract

V-band monolithic low-noise amplifiers (LNAs) were successfully fabricated using a manufacturable GaAs MESFET process. Ion-implanted n/sup +/-self-aligned GaAs MESFETs, which are used to make digital ICs, were employed. A fabricated single-stage LNA with a 0.13 μm Au/WSiN gate demonstrated a noise figure of 5 dB at 60 GHz with an associated gain of 7 dB. A two-stage LNA achieved a noise figure of 6 dB at 60 GHz with an associated gain of 14 dB. This is the first demonstration of ion-implanted n/sup +/-self-aligned GaAs MESFETs for millimeter-wave monolithic integrated circuits (MIMICs). The results are among the best ever reported for V-band GaAs-MESFET amplifiers.

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; field effect MIMIC; gallium arsenide; integrated circuit design; integrated circuit noise; ion implantation; millimetre wave amplifiers; 0.13 micron; 14 dB; 5 dB; 6 dB; 60 GHz; 7 dB; Au-WSiN; Au/WSiN gate; EHF; GaAs; MIMIC; V-band monolithic LNA; ion-implanted MESFET; low-noise amplifiers; manufacturable GaAs MESFET process; millimeter-wave monolithic ICs; n/sup +/-self-aligned MESFET; single-stage LNA; two-stage LNA; Fabrication; Gain; Gallium arsenide; Gold; Low-noise amplifiers; MESFETs; MMICs; Manufacturing processes; Noise figure; Optical amplifiers;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.763243

Filename

763243