Title :
A 38-GHz push-push oscillator based on 25-GHz fT BJT´s
Author :
Sinnesbichler, Franz X. ; Geltinger, Hans ; Olbrich, Gerhard R.
Author_Institution :
Lehrstuhl fur Hochfrequenztech., Tech. Univ. Munchen, Germany
fDate :
4/1/1999 12:00:00 AM
Abstract :
In this work, we present a 38 GHz push-push oscillator based on low-cost state-of-the-art silicon bipolar junction transistors (BJTs) with transit frequencies of approximately 25 GHz. The push-push principle allows the extension of the usable frequency range of the well-established silicon bipolar technology (with its specific advantages, as, for example, a low 1/f-noise) into the K and the Ka bands. The circuitry has been fabricated in thin film technology on a 10-mil alumina substrate. The output power of the oscillator is -11.5 dBm with a single-sideband phase noise of -80 dBc/Hz at an offset frequency of 100 kHz
Keywords :
alumina; bipolar transistor circuits; equivalent circuits; hybrid integrated circuits; integrated circuit noise; microstrip circuits; millimetre wave integrated circuits; millimetre wave oscillators; phase noise; power combiners; thin film circuits; 10 mil; 25 GHz; 38 GHz; Al2O3; K-band; Ka-band; Si BJTs; Wilkinson power combiner; alumina substrate; bipolar junction transistors; low 1/f-noise; push-push oscillator; single-sideband phase noise; thin film technology; Circuit testing; Equivalent circuits; Frequency measurement; Heterojunction bipolar transistors; Microwave oscillators; Power generation; Reflection; Silicon; Substrates; Thin film circuits;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
