Title :
A millimeter-wave multifunction HEMT mixer
Author :
Kim, M. ; Hacker, J.B. ; Sovero, E.A. ; Deakin, D.S. ; Hong, J.H.
Author_Institution :
Rockwell Inst. Sci. Center, Thousand Oaks, CA, USA
fDate :
4/1/1999 12:00:00 AM
Abstract :
A monolithic chip with a single 80 μm HEMT device, 1.25×3.0 mm2 in size, has been tested as both a fundamental and a subharmonic mixer. With input filter networks for K- and Q-bands providing two separate radio frequency/local oscillator (RF/LO) channels to the gate, the chip produces an IF signal from DC to 4 GHz at the drain. The mixer operates in three independent modes with the highest conversion gain of 6.9 dB in K-band fundamental mode, the best DSB noise figure of 4.4 dB in Q-band fundamental mode, and better than 20 dB of on-chip LO-to-RF isolation in Q-band subharmonic mode. In all three modes, the active mixer has shown positive conversion gain.
Keywords :
HEMT integrated circuits; MMIC mixers; field effect MIMIC; integrated circuit design; integrated circuit noise; millimetre wave mixers; 0 to 4 GHz; 4.4 dB; 40 to 50 GHz; 6.9 dB; 80 micron; DSB noise figure; EHF; K-band; MM-wave multifunction mixer; Q-band; active mixer; fundamental mixer; input filter networks; millimeter-wave HEMT mixer; monolithic chip; positive conversion gain; subharmonic mixer; Filters; Gain; HEMTs; K-band; Local oscillators; Mixers; Noise figure; RF signals; Radio frequency; Testing;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
