Title :
Measurement of proton radiation damage to Si avalanche photodiodes
Author :
Sun, Xiaoli ; Reusser, Daniel ; Dautet, Henri ; Abshire, James B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
fDate :
12/1/1997 12:00:00 AM
Abstract :
The effects of proton radiation damage on EG&G C30902S Si avalanche photodiodes (APD´s) were measured. The APD bulk leakage current increased at 0.29 fA/rad, or about 1800 dark photoelectrons per rad(Si) at -10°C under 16.2 MeV protons. There was little change in the breakdown voltage with the radiation doses up to 30 krad(Si). The increase in the total dark currents below the breakdown voltage was insignificant until 3 krad(Si)
Keywords :
avalanche photodiodes; dark conductivity; elemental semiconductors; leakage currents; proton effects; silicon; -10 degC; 16.2 MeV; Si; avalanche photodiodes; breakdown voltage; bulk leakage current; proton radiation damage; radiation doses; total dark currents; Avalanche photodiodes; Earth; Electrons; Extraterrestrial measurements; Ionization; Leakage current; Neutrons; Photodetectors; Protons; Sun;
Journal_Title :
Electron Devices, IEEE Transactions on
