Non-linear characteristics of passive elements on trap-rich high-resistivity Si substrates

Author

Ben Ali, K. ; Neve, Cesar Roda ; Shim, Yun-Pil ; Rais-Zadeh, Mina ; Raskin, Jean-Pierre

Author_Institution

Univ. catholique de Louvain (UCL), Louvain-la-Neuve, Belgium

fYear

2014

fDate

19-23 Jan. 2014

Firstpage

4

Lastpage

6

Abstract

RF losses and non-linear behavior of RF passive elements such as coplanar transmission lines and inductors are analyzed. The investigated trap-rich HR-Si wafers with a fixed oxide layer of 150 nm-thick show true effective resistivity values higher than 4 kΩ-cm up to 5 GHz and harmonic distortion levels lower than -90 dBm for a 900 MHz input with signal level of +25 dBm. High quality factor of 60 is measured for a 2 nH inductor on a trap-rich HR-Si substrate at 2.73 GHz frequency of operation. Our investigations confirm the capability of trap-rich HR-SOI wafer for the integration of passive elements for RF systems.

Keywords

coplanar transmission lines; electrical resistivity; elemental semiconductors; inductors; silicon-on-insulator; RF losses; RF passive elements; Si; coplanar transmission lines; fixed oxide layer; frequency 2.73 GHz; harmonic distortion levels; high quality factor; inductors; non-linear characteristics; size 150 nm; trap-rich HR-SOI wafer; trap-rich high-resistivity silicon substrates; Conductivity; Coplanar waveguides; Harmonic analysis; Inductors; Radio frequency; Silicon; Substrates; HR-SOI; RF integration; Silicon-on-Insulator (SOI); SoC; high resistivity (HR) Si; non-linearity; trap-rich;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in Rf Systems (SiRF), 2014 IEEE 14th Topical Meeting on

Conference_Location

Newport Beach, CA

Type

conf

DOI

10.1109/SiRF.2014.6828521

Filename

6828521