An investigation of the temperature dependent linearity of weakly-saturated, electrically-matched SiGe NPN and PNP HBTs

Author

Seungwoo Jung ; Song, Peter ; Song, Iickho ; Schmid, R. ; Cressler, John D. ; Babcock, Jeff A.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Tech, Atlanta, GA, USA

fYear

2014

fDate

19-23 Jan. 2014

Firstpage

86

Lastpage

88

Abstract

The linearity of electrically-matched NPN and PNP silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) on insulator (SOI) under weakly-saturated conditions, at both room temperature (300 K) and an elevated temperature (373 K), is investigated and compared for the first time. In addition, the potential circuit leverage associated with using matched complementary SiGe HBTs biased in weak-saturation is demonstrated using a Class AB push-pull output stage of a current feedback amplifier.

Keywords

Ge-Si alloys; amplifiers; heterojunction bipolar transistors; silicon-on-insulator; SiGe; circuit leverage; class AB amplifier; current feedback amplifier; electrically matched HBT; heterojunction bipolar transistor; matched complementary HBT; push-pull output stage; silicon-on-insulator; temperature 300 K; temperature 373 K; temperature dependent linearity; weakly saturated HBT; Current density; Feedback amplifier; Heterojunction bipolar transistors; Linearity; Performance evaluation; Silicon germanium; Silicon-on-insulator; Heterojunction bipolar transistors (HBTs); IIP3; linearity; low supply voltage; silicon on insulator (SOI); silicon-germanium (SiGe); weakly-saturated;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in Rf Systems (SiRF), 2014 IEEE 14th Topical Meeting on

Conference_Location

Newport Beach, CA

Type

conf

DOI

10.1109/SiRF.2014.6828525

Filename

6828525