Title :
High power operation of widely tunable 1.55 μm distributed Bragg reflector laser
Author :
Delorme, F. ; Grosmaire, S. ; Gloukhian, A. ; Ougazzaden, A.
Author_Institution :
CNET, Bagneux, France
fDate :
1/30/1997 12:00:00 AM
Abstract :
Singlemode operation with an output power of up to 100 mW is reported for the first time for InGaAsP-InP DBR lasers. These devices exhibiting a record 17 nm tuning range, have been realised using a three-step MOVPE process. The output power variations under tuning are limited to ~1.5 dB, and the tuning range remains quasi-constant with output power
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; laser tuning; optical fabrication; optical transmitters; semiconductor lasers; vapour phase epitaxial growth; 1.55 micron; 100 mW; InGaAsP-InP; distributed Bragg reflector laser; high power operation; semiconductor lasers; singlemode operation; three-step MOVPE process; widely tunable DFB laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970143
