Floating body effects in polysilicon thin-film transistors

Author

Valdinoci, Marina ; Colalongo, Luigi ; Baccarani, Giorgio ; Fortunato, Guglielmo ; Pecora, A. ; Policicchio, I.

Author_Institution

Dept. of Electron., Bologna Univ., Italy

Volume

44

Issue

12

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

2234

Lastpage

2241

Abstract

Floating body effects in polycrystalline silicon thin film transistors (poly-TFTs) are investigated by means of numerical simulations. The current increase in the output characteristics at large V_DS, usually referred to as the “kink effect” is explained by impact ionization occurring in the high-field region at the drain end of the channel. Its effect is enhanced by the action of a parasitic bipolar transistor in the back-channel region, whose base current arises from the impact generated holes. The dependence of the kink on the recombination kinetics is also investigated

Keywords

MOSFET; electron-hole recombination; elemental semiconductors; impact ionisation; semiconductor device models; silicon; thin film transistors; Si; back-channel region; floating body effects; high-field region; impact generated holes; impact ionization; kink effect; numerical simulation; parasitic bipolar transistor; poly-TFTs; polysilicon TFT; polysilicon thin-film transistors; recombination kinetics; Bipolar transistors; CMOS technology; Circuits; Impact ionization; MOS devices; Numerical simulation; Silicon; Spontaneous emission; Thin film transistors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.644643

Filename

644643