• DocumentCode
    150751
  • Title

    Design challenges and solutions for Non-Volatile SRAMs

  • Author

    Hraziia ; Amara, A. ; Vladimirescu, Andrei ; Anghel, Costin ; Thomas, O.

  • Author_Institution
    Inst. Super. d´Electron. de Paris, Paris, France
  • fYear
    2014
  • fDate
    4-6 May 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A novel hybrid memory architecture - Non-Volatile SRAMs (NVSRAMs) wherein resistive memories incorporated as an integral part of SRAM cell to provide information back-up feature is presented in this paper. It also makes a discussion on some of the challenges faced in implementing hybrid memories and the prospective solutions.
  • Keywords
    SRAM chips; integrated circuit design; NVSRAM; SRAM cell; hybrid memory architecture; information back-up feature; nonvolatile SRAM; resistive memories; Computer architecture; Microprocessors; Nonvolatile memory; Resistance; SRAM cells; Transistors; Non-Volatile SRAMs; Resistive RAMs (RRAMs); UTBB-FDSOI; dynamic voltage scaling; variability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Faible Tension Faible Consommation (FTFC), 2014 IEEE
  • Conference_Location
    Monaco
  • Type

    conf

  • DOI
    10.1109/FTFC.2014.6828611
  • Filename
    6828611
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=150751