• DocumentCode
    1507530
  • Title

    Improved exponential bidirectional associative memory

  • Author

    Chen, Songcan ; Gao, Hang ; Yan, WeI

  • Author_Institution
    Dept. of Comput. Sci., Nanjing Univ. of Aeronaut. & Astronaut., China
  • Volume
    33
  • Issue
    3
  • fYear
    1997
  • fDate
    1/30/1997 12:00:00 AM
  • Firstpage
    223
  • Lastpage
    224
  • Abstract
    Based on Jeng´s exponential bidirectional associative memory (eBAM) another improved updating rule for eBAMs is presented. In the recalling process of the improved eBAM (IeBAM), the continuity assumption of the eBAM is avoided, and the stability of the system in synchronous and asynchronous modes are proven by defining an energy function which decreases on the change of neuron states. The proposed model greatly improves the performances of the eBAM. Computer simulations demonstrate that the IeBAM has a much higher storage capacity and a better error correcting capability than those of the eBAM
  • Keywords
    content-addressable storage; error correction; exponential distribution; neural nets; IeBAM; asynchronous modes; continuity assumption; eBAMs; energy function; error correcting capability; exponential bidirectional associative memory; neuron states; recalling process; storage capacity; synchronous modes; updating rule;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970155
  • Filename
    575939