Variability Impact of Random Dopant Fluctuation on Nanoscale Junctionless FinFETs

Author

Leung, Greg ; Chui, Chi On

Author_Institution

Dept. of Electr. Eng., Univ. of California at Los Angeles, Los Angeles, CA, USA

Volume

33

Issue

6

fYear

2012

fDate

6/1/2012 12:00:00 AM

Firstpage

767

Lastpage

769

Abstract

Junctionless fin held-effect transistor (FinFET) variability due to random dopant fluctuation (RDF) was investigated for sub-32-nm technology generations using technology computer-aided design (TCAD) simulations. Results indicate that variations in threshold voltage, drive current, leakage current, and drain-induced barrier lowering are heavily impacted by RDF for junctionless FinFETs with sufficiently high channel doping (greater than 10¹⁹ cm^-3). Unexpectedly, the RDF impact is found to be less severe for finer technology generations, although the overall magnitude is still significant compared to line-edge-roughness-induced variability.

Keywords

MOSFET; leakage currents; nanotechnology; semiconductor doping; technology CAD (electronics); TCAD simulations; drain-induced barrier; drive current; high channel doping; junctionless fin held-effect transistor; leakage current; line-edge-roughness-induced variability; nanoscale junctionless FinFET; random dopant fluctuation; size 32 nm; technology computer-aided design; threshold voltage; variability impact; Doping; FinFETs; Nanoscale devices; Resource description framework; Semiconductor process modeling; Threshold voltage; Fin field-effect transistor (FinFET); junctionless; random dopant fluctuation (RDF); variability;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2191931

Filename

6194263